GaN HEMT vs. SiC MOSFETs: 10 Critical Factors Every Power Electronics Designer MUST Know!
GaN HEMT vs. SiC MOSFETs: 10 Critical Factors Every Power Electronics Designer MUST Know! Alright, fellow power electronics wizards, buckle up! If you’ve been in this game for more than a minute, you know the quest for efficiency never truly ends. It’s a relentless pursuit, a bit like trying to catch a greased pig at a county fair – challenging, often messy, but oh-so-rewarding when you finally nail it! For decades, silicon (Si) reigned supreme, holding court as the undisputed king of power semiconductors. But guess what? There’s a new guard, or rather, two new formidable contenders that are shaking up the hierarchy and making us rethink everything we thought we knew about power conversion: Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) . These Wide Bandgap (WBG) materials are not just incremental improvements; they’re game-changers, offering efficiencies and power densities th...